13003A DATASHEET PDF

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Rochester Contact Sales Office. The transistor is subdivided into one datashet according to its DC current gain. Licensee is and shall be solely responsible and liable for any Modifications and for any Licensee Products, and for testing the Software, Modifications and Licensee Products, and for testing and implementation of the functionality of the Software and Modifications with the Licensee Products. Suitable for V circuit mode,fluorescent lamp,electronic ballast.

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It is expressly understood that all Confidential Information transferred hereunder, and all copies, modifications, and derivatives thereof, will remain the property of ON Semiconductor, and the Licensee is authorized to use those materials only in accordance with the terms and conditions of this Agreement. The UTC A 1. Your request has been submitted for approval.

Upon the effective date of termination of this Agreement, all licenses granted to Licensee hereunder shall terminate and Licensee shall cease all use, copying, modification and distribution of the Content and shall promptly either destroy or return to ON Semiconductor all copies of the Content in Licensee’s possession or under Licensee’s control.

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You will receive an email when your request is approved. High voltage capability, high speed switching, wide soa, RoHS compliant.

Previously Viewed Products Select Product Nothing in this Agreement shall be construed as creating a joint venture, agency, partnership, trust or other similar association of any kind between the parties hereto. Absolute Maximum Rat 1.

In that event, “Licensee” herein refers to such company. However, during the term of this Agreement ON Semiconductor may from time-to-time in its sole discretion provide such Support to Licensee, and provision of same shall not create nor impose any future obligation on ON Semiconductor to provide any such Support.

MJE13003: 1.5 A, 400 V NPN Bipolar Power Transistor

Log into Datsaheet to proceed. Inductive Switching Matrix 0. At a minimum such license agreement shall safeguard ON Semiconductor’s ownership rights to the Software. It is intended to be used in applications requiring medium voltage capability and high switching speeds.

Absolute Maximum Ratings Symbol Paramet 1. Licensee agrees that it shall maintain accurate and complete records relating to its activities under Section 2.

A Datasheet, Equivalent, Cross Reference Search. Transistor Catalog

Package Packing T datasheett. For AF driver and output stages? Features 1 Suitable for RCC circuits. Suitable for V circuit mode, fluorescent lamp, electronic ballast. Please allow business days for a response. The UTC E 1.

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Except as expressly permitted in this Agreement, Licensee shall not disclose, or allow access to, the Content or Modifications to any third party. The parties hereto are for all purposes of this Agreement independent contractors, and neither shall hold itself out as having any authority to act as an agent or partner of the other party, or in any way bind or commit the other party to any obligations.

Finish – Ma 1. Within 30 days after the termination of the Agreement, Licensee shall furnish a statement certifying that all Content and related documentation have been destroyed or returned to ON Semiconductor. Except as expressly permitted in this Agreement, Licensee shall not itself and shall restrict Customers from: High Speed Switching Structure?

Emitter General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switchin 1. The following Sections of this Agreement shall survive the termination or expiration of this Agreement for any reason: Internal schematic diagram multi-epitaxial planar tec 1.

Request for this document already exists and is waiting for approval. High voltage capability,high speed switching,wide soa,RoHS compliant.