2N3955 DATASHEET PDF

2N datasheet, 2N circuit, 2N data sheet: INTERFET – N-Channel Dual Silicon Junction Field-Effect Transistor,alldatasheet, datasheet, Datasheet. 2N Transistor Datasheet, 2N Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for.

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It has a transition frequency of 2. Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion.

Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies. Commons category link from Wikidata. Modern successors to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers.

The art of electronics 2nd ed. The frequency at which gain begins to drop off may be much lower, see below.

By using this site, you agree to the Terms of Use and Privacy Policy. The team of design, production, and applications engineers received RCA Electronic Components achievement awards datawheet Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dies with lesser power ratings, use inferior mounting techniques, and fake the markings.

2N3955 MOSFET. Datasheet pdf. Equivalent

It is by now unlikely to actually obtain a genuine 2N transistor when using popular sales platforms such as Amazon or Ebay; classic electronics distributors are mostly still able to properly source them. Variants with higher voltage ratings e. KD are packaged in a TO-3 case style called T41 by Teslait is 2j3955 20 amp80 voltwatt power transistor.

Retrieved 31 October The 2N is a silicon NPN power transistor intended for general purpose applications. In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although datasheef BDY38 has lower voltage ratings than the 2N From Wikipedia, the free encyclopedia. The total power dissipation written P D in most American datasheets, P tot in European ones depends on the heatsink to which the 2N is connected.

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KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications.

2N Price & Stock | DigiPart

Also the higher frequency response has improved performance when used in audio amplifiers. Modern catasheet datasheets often, but not always, specify f T of 2.

Views Read Edit View history. Build your own low-power transmitters: With an “infinite” heatsink, that is: It was produced exclusively by the Czechoslovakian electronics company Tesla.

N-Channel Dual Silicon Junction Field-Effect Transistor

RCA by had changed their specification to give 2. With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology. In other projects Wikimedia Commons. The KD have higher power and higher current than 2N The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists.

The robot builder’s bonanza 2nd ed. The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps. Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed to have great high-frequency performance and there can be degradation of phase-shift and open-loop gain even within the audio frequency datwsheet.

Retrieved 7 November The 2N remains very popular as a series pass transistor in linear power supplies and is still used in for medium- current and high- power circuits generally, including low frequency power converters although its 23955 in audio power datazheet and DC-to-AC inverters is now less common and its use in higher frequency switch-mode applications never was very practical.

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2N MOSFET Datasheet pdf – Equivalent. Cross Reference Search

This page was last edited on 22 Novemberat The historically-significant 2N 2n39555 designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard. It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids.

Other manufacturers around this time also would specify similar values e. The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly, [7] [8] [9] else physical damage or worsened datasbeet handling may result, especially with cases or heatsinks that are not perfectly flat.

The exact datashee characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 0.

The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor. It was second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet.

Wikimedia Commons has media related to 2N The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are still useful in new designs and are still popular for experimenters.

Graf; William Sheets An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N It often has a transition frequency of around 3.

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