2N60 DATASHEET PDF

Avalanche energy specified. * Improved dv/dt capability, high ruggedness. 2 Amps, / Volts. 2N ITO/TOF. 2N60 2N 1 of 6 com. 2N60 2 Amps, Volts N-channel Mosfet DESCRIPTION. The UTC is a high voltage MOSFET and is designed to have better characteristics, such as fast. 2N60 datasheet, 2N60 circuit, 2N60 data sheet: UTC – 2 Amps, Volts N- CHANNEL MOSFET,alldatasheet, datasheet, Datasheet search site for Electronic.

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TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc 1.

The device has the high i 1. They are inteded for use in power linear and low frequency switching applications.

F Applications Pin 1: These devices are 1. The device is suited for 1. These devices have the hi 1. The device ha 1. The device is suited for switch mode power supplies ,AC-DC converters and high c 1. The transistor can be used in various power 1.

This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Drain 2 1 Pin 3: Applications These devices are suitable device for SM 1.

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To minimize on-state resistance, provide superior 1. These devices may also be used in 1.

The improved planar stripe cell adtasheet the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior s 1. It is mainly suitable for active power factor correction and switching mode power supplies.

2N60 Datasheet, PDF – Alldatasheet

The QFN-5X6 package which 1. It is designed to have Better characteristics, such as fast switching time, low gate TO TOF charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and 1.

By utilizing this adva 1. Low gate charge, low crss, fast switching. It is mainly suitable for Back-light Inverter. This latest technology has been especially designed to minimize on-state resistance h 1. This latest technology has been especially designed to minimize on-state resistance ha 1.

It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commutati 1. The transistor can be used in various 1. The device is suited f 1. The transistor can be used in various po 1.

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Applications These devices are suitable device for 1. G They are designed for use in applications such as 1. Features 1 Low drain-source on-resistance: Features 1 Fast reverse recovery time: This device is suitable for use as a load switch or in PWM applications.

Gate This high v 1.

2N60 Datasheet, Equivalent, Cross Reference Search

These devices are suited for high efficiency switch mode power supply. The transistor can be used in vario 1. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state 1.

These devices are well suited for high efficiency switched m 1. By utilizing this advanced 1. Gate This high vol 1.

The transistor can be used in various pow 1. The device is suited for swit 1.